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首页> 外文期刊>International Journal of Heat and Mass Transfer >Understanding the growth mechanism of single vapor bubble on a hydrophobic surface: Experiments under nucleate pool boiling regime
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Understanding the growth mechanism of single vapor bubble on a hydrophobic surface: Experiments under nucleate pool boiling regime

机译:了解单蒸气泡对疏水表面的生长机制:核心池沸腾制度下的实验

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摘要

Growth and departure characteristics of single vapor bubble on hydrophobic surfaces have been investigated under saturated bulk conditions. Nucleate pool boiling experiments, with water as the working fluid, have been carried out on two sets of hydrophobic surfaces; (1) black painted ITO-coated glass substrate, and (2) ITO-coated sapphire substrate subjected to two different levels of constant heat flux conditions. High speed camera was employed to characterize the bubble dynamics. In conjunction with the high speed camera, an IR thermal imaging camera was used to simultaneously map the spatio-temporal temperature distribution of the substrate underneath the growing vapor bubble. Compared to the black paint coated glass substrate, significantly higher transmissivity of sapphire substrate in the mid-IR spectral range ensured the authenticity of the spatio-temporal accuracy of temperature measurements of the bubble nucleation site using the employed IR camera. Results on the bubble growth clearly showed that, irrespective of the substrate employed, the bubble exhibits almost zero waiting time, leaving a small residue of vapor on the substrate after the bubble departure, which further acts as a nucleus for the next bubble. Moreover, the bubble growth process was observed to be extremely slow. The IR camera-based temperature field of the hydrophobic substrates revealed that the presence of vapor bubble does change the local temperature of the substrate underneath the vapor bubble. However, it was observed that the temperature field of the nucleation site does not change with bubble growth and its departure, which, in turn, indicated towards the possibility that the microlayer ceases to exist underneath the vapor bubble. This is in contrast to the microlayer evaporation-driven growth of single vapor bubble on a hydrophilic substrate. Based on these direct experimental observations, plausible bubble growth mechanism(s) on the given hydrophobic surfaces have been predicted and discussed.
机译:在饱和批量条件下研究了疏水表面上单蒸汽泡的生长和脱离特征。核心池沸腾实验,用水作为工作流体,在两套疏水表面上进行; (1)黑漆ITO涂层玻璃基板,(2)ITO涂层的蓝宝石底物经受两种不同水平的恒定热通量条件。采用高速相机来表征泡沫动态。结合高速摄像机,使用IR热成像相机同时映射在生长蒸汽泡下面的基板的时空温度分布。与黑色涂料涂覆的玻璃基板相比,中红外光谱范围内的蓝宝石衬底的显着较高透射率确保了使用所采用的IR相机的气泡成核位点温度测量的时空精度的真实性。结果对气泡的生长清楚地表明,与所用基板无关,气泡几乎归零等待时间,在气泡脱落后留下基板上的小残留物,这进一步用作下一个泡沫的核。此外,观察到气泡生长过程非常慢。疏水基材的IR相机的温度场显示蒸汽气泡的存在确实改变了蒸汽泡下面的基板的局部温度。然而,观察到核细胞部位的温度场不会随着泡沫生长和其出发而改变,这反过来旨在朝着微层的可能性不再存在于蒸汽泡下方的可能性。这与微层蒸发驱动的单蒸气泡对亲水基质相反。基于这些直接实验观察,已经预测并讨论了给定的疏水表面上的合理泡沫生长机制。

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