High microwave power source for 2.45 GHz wireless power charger applications

摘要

The first report on a GaN-on-Si high electron-mobility transistor (HEMT) differential oscillator is presented. A high output power and low phase noise, 2.45 GHz cross-coupled pair voltage-controlled oscillator (VCO), using 0.35 μm GaN HEMT on silicon substrate technology is described. The VCO can be tuned, between 2.41 GHz and 2.53 GHz, and has a low phase noise, of-129.09 dBc/Hz, at 1 MHz offset. The output power of the VCO is 18.31 dBm at 2.53 GHz from a 15 V power supply, while the total die size was 0.87 mm~2. The high output power and low phase noise are obtained for wireless power charger applications.