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A power-area-efficient, 3-band, 2-RX MIMO, TD-LTE receiver with direct-coupled ADC

机译:具有直接耦合ADC的省电型高效能3频段2-RX MIMO TD-LTE接收器

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摘要

In this work, a power-area-efficient, 3-band, 2-RX MIMO, and TD-LTE (backward compatible with the HSPA+, HSUPA, HSDPA, and TD-SCDMA) CMOS receiver is presented and implemented in 0.13-m CMOS technology. The continuous-time delta-sigma A/D converters (CT sigma ADCs) are directly coupled to the outputs of the transimpedance amplifiers, eliminating the need of analog anti-aliasing filters between RX front-end and ADCs in conventional structures. The strong adjacent channel interference without low-pass filter attenuation is handled by proper gain control. A low-power small-area solution for excess loop delay compensation is implemented in the CT sigma ADC. At 20MHz bandwidth, the CT sigma ADC achieves 66dB dynamic range and 3.5dB RX chip noise figure is measured. A maximum of 2.4dB signal-to-noise ratio degradation is measured in all the adjacent channel selectivity (ACS) and blocking tests, demonstrating the effectiveness of the strategy against the low-pass filter removal from the conventional architecture. The receiver dissipates a maximum of 171mW at 2-RX MIMO mode. To our best knowledge, it is the first research paper on the design of fully integrated commercial TD-LTE receiver. Copyright (c) 2014 John Wiley & Sons, Ltd.
机译:在这项工作中,提出了并在0.13-m中实现了功率面积高效的3频段2-RX MIMO和TD-LTE(与HSPA +,HSUPA,HSDPA和TD-SCDMA向后兼容) CMOS技术。连续时间delta-sigma A / D转换器(CT sigma ADC)直接耦合到跨阻放大器的输出,无需传统结构中RX前端和ADC之间的模拟抗混叠滤波器。适当的增益控制可解决无低通滤波器衰减的强烈邻道干扰问题。 CT sigma ADC中实现了用于多余环路延迟补偿的低功耗小面积解决方案。在20MHz带宽下,CT sigma ADC达到66dB的动态范围,并测量了3.5dB的RX芯片噪声系数。在所有相邻信道选择性(ACS)和阻塞测试中测得的最大信噪比降级为2.4dB,这表明该策略有效地防止了从传统架构中去除低通滤波器。接收机在2-RX MIMO模式下的最大功耗为171mW。据我们所知,这是有关完全集成的商用TD-LTE接收机设计的第一篇研究论文。版权所有(c)2014 John Wiley&Sons,Ltd.

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  • 作者单位

    Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China|Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China|Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

    Rising Micro Elect Co Ltd, Guangzhou 510006, Guangdong, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CT sigma ADC; direct-conversion; direct-coupled receiver; TD-LTE; excess loop delay compensation;

    机译:CT sigma ADC;直接转换;直接耦合接收器;TD-LTE;过大的环路延迟补偿;
  • 入库时间 2022-08-18 01:00:51

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