机译:采用0.13微米CMOS技术的4.8-6.8GHz低相位噪声LC VCO
Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MoE, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MoE, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MoE, Beijing 100871, Peoples R China;
Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits MoE, Beijing 100871, Peoples R China;
voltage controlled oscillator (VCO); low phase noise; tuning range; RapidIO;
机译:采用RC噪声滤波技术的5.8 GHz完全集成式低功耗低相位CMOS LC VCO
机译:5.18-7.42 GHz LC-VCO,亚阈值制度,低功耗低相位噪声和130nm CMOS技术的PVT变化的免疫力
机译:技术缩放对毫米波CMOS LC-VCO的调谐范围和相位噪声的影响
机译:采用130 nm CMOS技术的低功耗低相位噪声1.6 GHz LC-VCO
机译:CMOS技术中低相位噪声压控振荡器(VCO)的比较研究。
机译:28 nm CMOS LC振荡器电路拓扑中的相位噪声的比较分析:HartleyColpitts和共源交叉耦合差分对
机译:关于多相LC CmOs VCO的相位噪声和相位误差性能