A 0.75-V, 4-mu W, 15-ppm/degrees C, 190 degrees C temperature range, voltage reference

摘要

A low-voltage, low-power, low-area, wide-temperature-range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/degrees C for an extremely wide temperature range of 190 degrees C (-60 to 130 degrees C) while consuming only 4 W at 0.75 V. It performs a high-order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade-off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18-mu m standard CMOS technology and occupies an area of 0.039 mm(2). The proposed reference circuit is suitable for high-precision, low-energy-budget applications, such as mobile systems, wearable electronics, and energy harvesting systems. Copyright (C) 2015 John Wiley & Sons, Ltd.