Optimization for resistive reading probe of electric data storage system with a bit of 50 nm

摘要

Abstract. This paper deals with a practical methodology to optimize a reading probe of data storage devices using polarizationnin electric field. The tip and angle of probe pole between a probe and a medium are adopted and identified as significant designnvariables that have an effect on the polarization direction. The proposed sensitivity function and optimum resistive readingnprobe shape in the electric recording devices could be obtained by using Response Surface Method and Finite Element Method.