IN SITU MEASUREMENTS OF MELT SUPERCOOLING NEAR THE SOLIDIFICATION INTERFACE IN CRYSTAL GROWTH OF Bi_4Ge_3O_12

摘要

We demonstrate the potentialities of a direct method for evaluating melt supercooling, in which the intensity of thermal radiation from the solidification interface is measured with an optical pyrometer through the growing crystal. With this method, the temperature of the crystal-melt interface can be assessed. Experimental data are presented on the supercooling as a function of growth rate for Bi_4Ge_3O_12 growing along [211].The method can be used to assess the effect of growth conditions on melt supercooling near the solidification interface.