首页> 外文期刊>Inorganic materials >Films of (Gd_(1-x)Tb_xO_2S Solid Solutions Produced by Oxide Sulfidation in NH_4SCN Vapor and Their Optical Properties
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Films of (Gd_(1-x)Tb_xO_2S Solid Solutions Produced by Oxide Sulfidation in NH_4SCN Vapor and Their Optical Properties

机译:(GD_(1-x)TB_XO_2S通过氧化物硫化在NH_4SCN蒸气中产生的固溶体及其光学性质

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摘要

(Gd1- xTbx)(2)O-3(x= 0.04-0.22) films 115 to 150 nm in thickness have been grown on Si and SiO(2)substrates by metal organic chemical vapor deposition (MOCVD) using Ln(dpm)(3)precursors. After annealing in air at 800 degrees C for removing carbon-containing impurities, the films were sulfided in NH4SCN vapor at temperatures from 700 to 1000 degrees C in an Ar atmosphere until the formation of (Gd1 -xTbx)(2)O2S oxysulfides. The surface of the films is formed by grains 60 to 200 nm in size. The measured refractive index of the films is 2.2-2.4 and their estimated optical band gap (E-g) is 4.7-5.0 eV. The optical transmission of the films in the visible spectral region (400-750 nm) reaches 78-84%. The highest photoluminescence (PL) intensity in the oxysulfide films produced under identical conditions has been observed atx= 0.05. The blue component of their PL decreases with increasing terbium content and the emission shifts to the green spectral region.
机译:(使用LN(DPM)通过金属有机化学气相沉积(MOCVD)在Si和SiO(2)衬底上生长在Si和SiO(2)基板上生长(GD1-XTBX)(2)O-3(X = 0.04-0.22)薄膜115至150nm (3)前体。在800℃下的空气中退火以除去含碳杂质后,在AR气氛中在700至1000℃的温度下在NH 4 SCN蒸汽中硫化薄膜,直至形成(Gd1 -XTBX)(2)O 2 S氧硫化物。薄膜的表面由晶粒60至200nm的尺寸形成。薄膜的测量折射率为2.2-2.4,其估计的光带隙(E-G)为4.7-5.0eV。可见光谱区域(400-750nm)中的膜的光学传输达到78-84%。在相同条件下产生的氧硫化膜中的最高光致发光(PL)强度已被观察到ATX = 0.05。它们的PL的蓝色成分随着铽含量的增加而降低,发射转移到绿色光谱区域。

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  • 来源
    《Inorganic materials》 |2020年第8期|836-846|共11页
  • 作者单位

    Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Pr Akad Lavrenteva 3 Novosibirsk 630090 Russia;

    Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Pr Akad Lavrenteva 3 Novosibirsk 630090 Russia;

    Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Pr Akad Lavrenteva 3 Novosibirsk 630090 Russia;

    Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Pr Akad Lavrenteva 3 Novosibirsk 630090 Russia;

    Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Pr Akad Lavrenteva 3 Novosibirsk 630090 Russia;

    Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Pr Akad Lavrenteva 3 Novosibirsk 630090 Russia;

    Russian Acad Sci Siberian Branch Nikolaev Inst Inorgan Chem Pr Akad Lavrenteva 3 Novosibirsk 630090 Russia|Novosibirsk Natl State Res Univ Ul Pirogova 2 Novosibirsk 630090 Russia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    thin films; oxide sulfidation; gadolinium oxysulfide; terbium oxysulfide; solid solutions; photoluminescence;

    机译:薄膜;氧化硫化;氧硫化钆;氧硫化铽;固溶体;光致发光;

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