Narrow spectral band monolithic lead-chalcogenide-on-Si mid-IR photodetectors

摘要

Narrow spectral band infrared detectors are required for multispectral infrared imaging. We review the first photovoltaic resonant cavity enhanced detectors (RCED) for the mid-IR range. The lead-chalcogenide (PbEuSe) photodetector is placed as a very thin layer inside an optical cavity. At least one side is terminated with an epitaxial Bragg mirror (consisting of quarter wavelength PbEuSe/BaF_2 pairs), while the second mirror may be a metal. Linewidths are as narrow as 37 nm at a peak wavelength of 4400 nm, and peak quantum efficiencies up to above 50% are obtained.