机译:使用Si IGBT和SiC MOSFET的直接矩阵转换器和间接矩阵转换器之间的实验效率比较
Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham, U.K.;
Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham, U.K.;
Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham, U.K.;
Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham, U.K.;
Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham, U.K.;
Department of Electrical and Electronic Engineering, University of Nottingham, Nottingham, U.K.;
Modulation; Silicon carbide; Silicon; Insulated gate bipolar transistors; MOSFET; Matrix converters; Switches;
机译:使用Si IGBT和SiC MOSFET的直接矩阵转换器的实验比较
机译:基于6.5 kV Si-IGBT / Si-PiN二极管,6.5 kV Si-IGBT / SiC-JBS二极管和10kV SiC-MOSFET / SiC-JBS的大功率中压转换器的设计比较二极管
机译:SiC MOSFET与软切换器中SI IGBT的实验评价
机译:使用SiC MOSFET的直接矩阵转换器(DMC)和间接矩阵转换器(IMC)中器件热循环的实验比较
机译:基于间接矩阵转换器的单级高频链路PWM AC / AC转换器,具有基于能量的泄漏能量交换。
机译:多方向矩阵转换器的新型调制方法
机译:使用Si IGBT和SiC MOSFET基于效率的直接矩阵转换器和间接矩阵转换器之间的实验效率比较