Three-Level Two-Stage Decoupled Active NPC Converter With Si IGBT and SiC MOSFET

摘要

This paper presents the operation principle and benefits of a novel power converter topology named three-level two-stage decoupled active neutral point clamped (3L-TDANPC) converter, which is implemented based on a hybrid utilization of silicon (Si) insulated gate bipolar transistors (IGBTs) and silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (mosfets). The 3L-TDANPC converter can achieve high efficiency with limited number of SiC mosfet modules while keeping balanced loss distribution among the switching devices, which helps increase the converter power ratings. In addition, in this 3L-TDANPC converter, the SiC mosfet has a potential to ride through short-circuit fault because of the presence of Si IGBTs. The key challenges that are associated with system resonant current are investigated and the methods to damp such resonant current are proposed and explained in detail. The simulation and experimental results based on a 1-MW 3L-TDANPC converter prototype confirm the expected benefits of this proposed converter and the effectiveness of the proposed resonant current damping methods.