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首页> 外文期刊>IEEE Transactions on Industrial Electronics >Closed-Loop Control and Boundary for CCM and DCM of Nonisolated Inverting N× Multilevel Boost Converter for High-Voltage Step-Up Applications
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Closed-Loop Control and Boundary for CCM and DCM of Nonisolated Inverting N× Multilevel Boost Converter for High-Voltage Step-Up Applications

机译:用于高压升压应用的非固化反相N×Multiagevel Boost转换器的CCM和DCM的闭环控制和边界

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摘要

In this paper, closed-loop control and boundary condition for continuous conduction mode and discontinuous conduction mode of nonisolated inverting N multilevel boost converter (MBC) are articulated. Inverting N MBC combines the features of classical boost converter and voltage multiplier to attain inverting N times higher voltage. Consequently, the inverting N MBC provides a viable solution for high-voltage step-up photovoltaic applications with low voltage rating reactive components and semiconductor devices. The control strategy with saturation limiter is employed to achieve highly stable voltage. The modes of operation, benefits of inverting N MBC, and key factors for the selection of semiconductor devices and sizing of the reactive components are discussed. Additionally, the effects of reactive components and semiconductor devices on the output voltage are examined. Experimental results of the developed circuit are presented to validate the design of converter, and effectiveness and robustness of the implemented control algorithm for different input and output side perturbations.
机译:在本文中,闭合环路控制和非固化反相N多级升压转换器(MBC)的连续导通模式和不连续传导模式的闭环控制和边界条件。反相N MBC结合了经典升压转换器和电压倍增器的特征,以获得更高电压的反相N倍。因此,反相N MBC为具有低压额定值反应分量和半导体器件的高压升压光伏应用提供了一种可行的解决方案。使用饱和限制器的控制策略用于实现高度稳定的电压。讨论了操作模式,反相N MBC的益处,以及选择半导体器件的关键因素和反应部件的尺寸。另外,检查反应部件和半导体器件对输出电压的影响。提出了开发电路的实验结果,以验证转换器的设计,以及用于不同输入和输出侧扰动的实现控制算法的有效性和鲁棒性。

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