Effect of substrate temperature on photo-electronic properties of thermally evaporated Zn Se thin films

摘要

The dark and photoconductivity of ZnSe films deposited at substrate temperature (T_s) range 303K to 623K were measured. The conductivity (σ_d) of the films were ～10~-6 Ω~-1 at room temperature and were found to decrease with T_s. The activation energies were evaluated from the ln σ_d versus 10~3/T plots which showed two activation processes in the ambient temperature range 303K to 453K. The activation energy showed an independent trend with T_s.