$38.6m SiC ICs, GaN PAs, Mosfets, IBTs and PiN diodes from Cree, Raytheon and Northrup Grumann

摘要

Cree Inc in Durham, NC received a $19.7m cost share/ technology investment agreement contract. The objective of Technology Investment Agreement is to establish a domestic source to develop a manufacturing capability for SiC MMIC devices, for commercial applications and next generation military radar systems. DARPA's research strategy for technological advantage is through the next-generation semiconductor material GAN and SiC will be the substrate material of choice for the GaN circuits.