A Development Summarization of the Power Semiconductor Devices

摘要

In this paper, the development history and status of the power devices have been reviewed on the basis of the different semiconductor material. The new evolution about the novel structures including the Super Junction (SJ) and analogous SJ is explained. The novel technology, which is to resolve the main contradiction between the breakdown voltage and specific on-resistance in power devices, is discussed to improve the device trade-off characteristic between the breakdown voltage and the on-resistance. This review is the first part for the development summarization of the power semiconductor devices. The other parts will be reported successively.