Aging Model for a 40 V Nch MOS, Based on an Innovative Approach

摘要

Usually, aging models implemented in design kits are able to accurately describe parameter degradation only if kinetics during constant voltage stress is relatively simple; a methodology is proposed to extend aging simulation to a more complex behavior, and indeed implementable into a commercial software environment (in the case Eldo UDRM by Mentor Graphics). The methodology is applied to describe Ron drift of a 40 V Nch MOS transistor.