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Dummy Fill Aware Buffer Insertion After Layer Assignment Based On An Effective Estimation Model

机译:基于有效估计模型的层分配后的虚拟填充感知缓冲区插入

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摘要

This paper studies the impact of dummy fill for chemical mechanical polishing (CMP)-induced capacitance variation on buffer insertion based on a virtual CMP fill estimation model. Compared with existing methods, our algorithm is more feasible by performing buffer insertion not in post-process but during early physical design. Our contributions are threefold. First, we introduce an improved fast dummy fill amount estimation algorithm based on [4], and use some speedup techniques (tile merging, fill factor and amount assigning) for early estimation. Second, based on some reasonable assumptions, we present an optimum virtual dummy fill method to estimate dummy position and the effect on the interconnect capacitance. Then the dummy fill estimation model was verified by our experiments. Third, we use this model in early buffer insertion after layer assignment considering the effects of dummy fill. Experimental results verified the necessity of early dummy fill estimation and the validity of our algorithm. Buffer insertion considering dummy fill during early physical design is necessary and our algorithm is promising.
机译:本文研究基于虚拟CMP填充估算模型的虚拟填充对化学机械抛光(CMP)引起的电容变化对缓冲液插入的影响。与现有方法相比,我们的算法通过不在后期处理中而是在早期物理设计中执行缓冲区插入来实现更可行。我们的贡献是三倍。首先,我们引入一种基于[4]的改进的快速虚拟填充量估计算法,并使用一些加速技术(平铺合并,填充因子和数量分配)进行早期估计。其次,基于一些合理的假设,我们提出了一种最佳的虚拟虚拟填充方​​法来估计虚拟位置及其对互连电容的影响。然后通过我们的实验验证了虚拟填充估计模型。第三,考虑虚拟填充的影响,我们在层分配后的早期缓冲区插入中使用此模型。实验结果验证了早期虚拟填充估计的必要性和我们算法的有效性。在早期物理设计中考虑虚拟填充的缓冲区插入是必要的,我们的算法很有希望。

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