Device Linearity and Gate Votage Swing Improvement by Al_0.3 Ga_0.7 As/In_0.15Ga_0.85As Double Doped-Channel Deisng

摘要

Devices DC, RF, and Microwave power per- formances between Al_0.3Ga_0.7As/In_0.15Ga_0.85 As double doped- channel FET (D-DCFETSs), conventional doped-channel Fets (DCFETs) and HEMTs are compared with each other. Device linearity and power performance have been improved by a dou- ble doped-channel design. The D-DCFETS provides a higher current density, higher gate breakdown voltage, and improves gate operation bias range as well as frequency performance.