A 130-nm CMOS 95-mm~2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput

摘要

A 1-Gb AG-AND flash memory has been fabricated using 0.13-μm CMOS technology, resulting in a cell area of 0.104 μm~2 and a chip area of 95.2 mm~2. By applying constant-charge-injection programming and source-line-select programming, a fast page programming time of 600 μs is achieved. The four-bank operation attains a fast programming throughput of 10 MB/s in multilevel flash memories. The compact SRAM write buffers reduce the chip area penalty. A rewrite throughput of 8.3 MB/s is achieved by means of the RAM-write operation during the erase mode.