首页> 外文期刊>IEICE Transactions on Electronics >Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
【24h】

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

机译:先进半导体器件的基本原理和应用特别节

获取原文
获取原文并翻译 | 示例
       

摘要

The semiconductor devices are facing the paradigm shift to realize future ubiquitous network society, and the demands for high-performance and new-functional devices have been growing especially from the environmental point of view. The objective of the special section is to discuss recent progress of fundamentals and applications of advanced semiconductor devices to meet the demand. This special section covers the entire field of semiconductor devices and materials from fundamental physics to advanced device technologies, and contains 21 papers in total; 16 of them are on Si and related devices and 5 on compound semiconductor and emerging devices. rnThe guest editor would like to express sincere thank to all the authors for their contributions and to all the reviewers for their help. He is also grateful to the editorial committee members for their dedicated efforts in organizing this special section.
机译:半导体器件正面临着实现未来无处不在的网络社会的范式转变,尤其是从环境的角度来看,对高性能和新功能器件的需求一直在增长。本节的目的是讨论满足需求的先进半导体器件的基本原理和应用的最新进展。这个特殊的部分涵盖了半导体器件和材料的整个领域,从基础物理学到先进的器件技术,共包含21篇论文;其中16个位于Si及其相关器件上,5个位于化合物半导体和新兴器件上。 rn特邀编辑要对所有作者的贡献和所有审稿人的帮助表示由衷的感谢。他也感谢编辑委员会成员为组织这一特别部分所做的不懈努力。

著录项

  • 来源
    《IEICE Transactions on Electronics》 |2009年第5期|593-593|共1页
  • 作者

    Tanemasa Asano;

  • 作者单位

    Ibaraki University, and M.Eng. and Dr.Eng. degrees from Tokyo Institute of Technology;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 00:27:32

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号