机译:室温工作的嵌入式通道双栅极单电子晶体管(RCDG-SET)
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
Inter-University Semiconductor Research Center and School of Electrical Engineering and Computer Science, Seoul National University San 56-1, Sillim-dong, Gwanak-gu, Seoul, 151-742, Republic of Korea;
single electron transistor; recessed channel; MOSFET current;
机译:室温工作的嵌入式通道双栅极单电子晶体管(RCDG-SET)
机译:室温工作的嵌入式通道双栅极单电子晶体管(RCDG-SET)
机译:室温工作的嵌入式通道双栅极单电子晶体管(RCDG-SET)
机译:HfSiON栅极电介质用于带有凹沟道阵列晶体管(RCAT)和钨栅极的60nm以下DRAM双栅极氧化物
机译:栅长短的栅凹氮化镓高电子迁移率晶体管。
机译:AlGaN / GaN高电子迁移率氟处理和凹槽通过氟处理和凹陷栅极充电效果
机译:选择性生长的双栅单电子晶体管的制备和低温传输性能