Current Status and Future Prospects of High Mobility Channel Technologies for High Performance CMOS

摘要

45nm世代を迎え、種々の微細化限界により、CMOS性能の飽和が顕在化している。このため、チャネルの電流駆動力向上やマルチゲートによる短チャネル効果抑制などの様々なチャネルエンジニアリングが、今後のCMOS特性の向上と等価的スケーリングには必須の技術と考えられている。本講演では、以上の観点から、ひずみSiやGeチャネル、Ⅲ-Ⅴチャネルを用いたMOSFETの現状・課題・将来像を紹介する。%Saturation of CMOS performance has been evident in the present 45 nm technology and beyond because of the a variety of limitations on the miniaturization. Thus, channel engineering, including the enhancement of drive current due to high mobility channel materials and multi-gate structures with robustness against short channel effects, has currently been recognized as mandatory for high performance CMOS. In this paper, we review the current status, the critical issues and the future prospects of the development of mobility-enhanced CMOS device structures using strained-Si, SiGe, Ge and Ⅲ-Ⅴ semiconductor MOS channels and the carrier transport properties in those channels.