Investigation of characteristics of pentacene-based MOSFETs structures

摘要

In order to realize organic devices with low operation voltage, we have fabricated thin pentacene-based metal-oxide-semiconductor (MOS) diodes and field-effect-transistors (FETs) with very thin SiO_2 gate dielectric (3-10 run). The 12 nm-thick pentacene showed excellent capacitance-voltage (C-V) characteristics with small hysteresis and high carrier concentration, such as 2×10~(18)cm~(-3). High mobility with low voltage, such as 0.3 cm~2/V-s was also obtained.