C-Ku 帯GaNHEMT 3 倍帯域高効率高出力増幅器

摘要

GaN HEMT （Gallium Nitride High Electron Mobility Transistor）を用いたHIC（Hybrid Integrated Circuit）構成のC-Ku 帯120%比帯域（3.1倍帯域）高効率高出力増幅器について報告する．広帯域高効率増幅器の設計を単純化するため，トランジスタが高効率動作する負荷インピーダンスの共役インピーダンスが抵抗とコンデンサで構成される並列回路に近似できることを示した．近似した並列回路をBPF（Band Pass Filter）の一部とする回路構成PPF形整合回路）により，広帯域な整合回路を実現した．上記の回路構成でGaN HEMT を用いたHIC 構成の高効率高出力増幅器を試作し，C-Ku 帯120%比帯域（3．1倍帯域）の広帯域に渡ってPAE（Powere Added Efficiency）18%以上、出力電力4W 以上の高効率かつ高出力が得られた．この結果は，GaN HEMT を用いたC 帯以上の比帯域100%を越えるHIC 構成の増幅器の中で最大のPAE である．%This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high power amplifier, which features high efficiency C-Ku band 120% relative bandwidth. It was found that, output impedance of a transistor under high efficiency operation can be modeled by parallel circuit of R and C. In the circuit design, BPF (Band Pass Filter) configuration is employed. Parasitic capacitance of the transistor is utilized as a part of BPF matching circuit. Hence broadband matching was successfully obtained.rnA C-Ku band GaN HEMT HIC amplifier was manufactured and measured at 30V drain voltage. More than 4W output power and 18% PAE (Power Added Efficiency) were obtained at 120% relative bandwidth. This result is state of the art at high efficiency GaN HEMT HIC amplifier with more than 100% relative bandwidth.