机译:具有75nm厚集电极的InGaAs SHBT中集电极电流扩展的估计
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2,0-okayama, Meguro-ku, Tokyo, 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2,0-okayama, Meguro-ku, Tokyo, 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2,0-okayama, Meguro-ku, Tokyo, 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2,0-okayama, Meguro-ku, Tokyo, 152-8552, Japan;
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-2,0-okayama, Meguro-ku, Tokyo, 152-8552, Japan;
InGaAs/InP; HBT; kirk effect; current spreading;
机译:具有75nm厚集电极的InGaAs SHBT中集电极电流分布的估算
机译:具有75nm厚集电极的InGaAs SHBT中集电极电流扩展的估计
机译:具有75nm厚集电极的InGaAs SHBT中集电极电流扩展的估计
机译:使用新的基极焊盘设计减少InP / InGaAs SHBT中的外部基极-集电极电容
机译:电子束在行波管收集器中传播的模型。
机译:离子交换树脂收集器和散装水收集器确定的苏拉威西岛中部热带地区的大气离子沉积
机译:高粗糙的铜集电器:用于柔性锂离子电池的硅电极和集电器之间的粘合性能
机译:热离子转换器的计算机控制性能映射收集器,保护环电位不平衡对蚀刻铼,铌平面转换器的观察到的集电极电流密度,电压特性和有限范围性能map的影响