高効率ZnO/Cu_2Oヘテロ接合太陽電池の作製

摘要

安価で資源的に問題が無く、かつ人休に対して無害な亜酸化銅(Cu2O)を用いるAlドープZnO(AZO)薄膜／ノンドープZnO(ZO)薄膜／多結晶Cu_2O構造を採用した低コストn-pヘテロ接合太陽電池を作製、高変換効率を達成した。高い変換効率はCuシートを熱酸化した高品質多結晶p形Cu2Oシート上に、厚さ約30-50[nm]の多結晶n形ZO薄膜層を低ダメージ成膜することにより達成した。AM1.5G擬似太陽光照射下において、開端電圧(Voc);0.69[v]、短絡電流密度(Jsc):10.1[Ma/cm]、因子曲線（FF）;0.5、及び変換効率（η）;3.83[%]を実現できた。%High conversion efficiencies above 3[%] were achieved in n-p heterojunction oxide solar cells with an Al-doped ZnO (AZO)on-doped ZnO (ZO)/ Cu2O structure. This achievement was made possible by the formation of an n-ZO thin-film layer, prepared with an appropriate thickness by a low damage deposition, on high quality Cu2O sheets produced by a thermal oxidization of copper sheets: n-ZO thin film optimal thickness in the range from 30 to 50 run. Photovoltaic characteristics such as an open circuit voltage of 0.69 [V], short circuit current of 10.1 [mA/cm~2], fill factor of 0.5 and conversion efficiency of 3.83[%] were attained under simulated AM1.5G solar illumination.