1550nmAlGaInAs埋込構造を有するDFB 了レイ集積型波長可変光源

摘要

A monolithic photonic integrated circuit (PIC) is a key technology for next-generation optical communication system, realizing compact package and low power consumption. In active devices, AlGalnAs/InP based buried-heterostructure (BH) laser has been demonstrated as a promising candidate for low power consumption and high speed light sources. There are many reports on PIC based on GalnAsP/InP system, however, the fabrication of PIC based on AlGaInAs/InP BH laser has not been reported to our best knowledge, and considered to be challenging to control re-growth interface with high reliability. In this paper, we investigated 1550nm AlGalnAs MQW BH laser for realization of high performance PIC, which consists of 12-channel array DFB lasers, integrated SOA for widely tunable laser in the%光集積素子(PIC：Photonic Integrated Circuit)は，次世代の光通信システムにおいて，小型かつ低消費電力を実現するためのキーテクノロジーである.単体素子においては，これまでに低消費電力かつ高速変調光源として，AlGalnAs/InP系の埋込ヘテロ構造(BH)レーザが報告されている.しかし，PICに関してはGalnAsP/InP系の報告は多くあるものの，AlGalnAs/InP系BHレーザを用いた報告例はない.我々は高機能PICの実現に向け，1550nm帯AlGalnAs BHレーザの開発を行い，AlGalnAs/InP系で初めて12chDFBレーザアレイとSOAを集積した1550nm帯波長可変レーザを作製したので報告する.