Residual phase noise measurements of VHF, UHF, and microwave components

摘要

The results of residual phase noise measurements on a number of VHF, UHF, and microwave amplifiers, both silicon (Si) bipolar junction transistor (BJT) and gallium arsenide (GaAs) field effect transistor (FET) based, electronic phase shifters, frequency dividers and multipliers, etc., which are commonly used in a wide variety of frequency source and synthesizer applications are presented. The measurement technique has also been used to evaluate feedback oscillator components, such as the loop and buffer amplifiers, which can play important roles in determining an oscillator's output phase noise spectrum (often in very subtle ways). While some information has previously been published related to component residual phase noise properties, it generally focused on the flicker noise levels of the devices under test, for carrier offset frequencies less than 10 kHz. The work reported herein makes use of an extremely low noise, 500 MHz surface acoustic wave resonator oscillator (SAWRO) test source for residual phase noise measurements, both close-to-and far-from-the-carrier. Using this SAWRO-based test source at 500 MHz, we have been able to achieve a measurement system phase noise floor of -184 dBc/Hz, or better, for carrier offset frequencies greater than 10 kHz, and a system flicker phase noise floor of -150 dBc/Hz, or better, at 1 Hz carrier offset. The paper discusses the results of detailed residual phase noise measurements performed on a number of components using this overall system configuration. Several interesting observations related to the residual phase noise properties of moderate to high power RF amplifiers, i.e., amplifiers with 1 dB gain compression points in the range of +20 to +33 dBm, are highlighted.