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首页> 外文期刊>IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control >Resistivity and adhesive strength of thin film metallizations onsingle crystal quartz
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Resistivity and adhesive strength of thin film metallizations onsingle crystal quartz

机译:单晶石英上薄膜金属化的电阻率和粘合强度

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摘要

Resistivity and adhesive strength were measured for the thin filmsn450 Å Cr-1800 Å Au, 450 Å Cr-1000 Å Mo-1800nÅ Au, 450 Å Cr-1000 Å Ni-1800 Å Au, 450 ÅnMo-1800 Å Au, 1800 Å Au, and 2000 Å Al on z-andnAT-oriented single crystal quartz substrates in the as-depositedncondition as well as after thermal annealing at 380°C and 450°Cnfor 30 min in air or vacuum. The Cr-Au films exhibited significantnresistivity increases after thermal annealing which were caused by theninterdiffusion of Cr and Au. Barrier layers of Mo or Ni limited suchnincreases after heat treatment. The Mo-Au, Au, and Al films exhibitednresistivity decreases following thermal annealing. The mean adhesivenstrengths of the Cr-Au, Cr-Mo-Au, and Cr-Ni-Au films were excellent innthe as-deposited and annealed conditions, ranging from 41 MPa to 70 MPa.nThe Mo-Au and Au films maintained relatively poor adhesion under allncircumstances. Heat treatment improved the poor adhesive strength of thenas-deposited Al films to values exceeding 63 MPa. Resistivity andnadhesive strengths did not differ significantly between the z- andnAT-oriented substrates
机译:测量了薄膜的电阻率和粘合强度n450 Cr-1800ÅAu,450 Cr-1000ÅMo-1800nAu,450 Cr-1000ÅNi-1800ÅAu,450ÅnMo-1800ÅAu,1800ÅAu在沉积状态下,以及在380°C和450°C的空气中或真空中进行30分钟的热退火后,在z-andnAT取向的单晶石英衬底上沉积2000ÅAl。 Cr-Au膜在热退火后表现出明显的电阻率增加,这是由于Cr和Au的相互扩散引起的。 Mo或Ni的阻挡层在热处理后限制了这种增加。 Mo-Au,Au和Al薄膜在热退火后电阻率降低。 Cr-Au,Cr-Mo-Au和Cr-Ni-Au薄膜在沉积和退火条件下的平均粘合强度极佳,在41 MPa至70 MPa的范围内。n Mo-Au和Au薄膜保持相对较差的状态在所有情况下的粘附。热处理将经鼻沉积的铝膜的不良粘合强度提高到超过63 MPa的值。 z和nAT取向的基材之间的电阻率和粘合强度没有显着差异

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