Relating Integrated Circuit Yield and Time-Dependent Reliability for Various Defect Density Distributions

摘要

The issue of developing a model to estimate field reliability from process yield has received a growing interest in recent years. Thus far, only Poisson and negative binomial relationships have been obtained, assuming that the number of yield defects is independent of the number of reliability defects in a device. In this paper, we derived explicit yield-reliability relationships for various defect density, such as Erlang, uniform, and triangle distributions, using a multinomial distribution to consider a correlation between the number of yield defects, and the number of reliability defects. The proposed model has advantages over previous models for any defect density distribution to determine the optimal burn-in time.