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Investigation of candidate VRM topologies for future microprocessors

机译:调查未来微处理器的候选VRM拓扑

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摘要

By reducing the power supply voltage, faster, lower power consumption, and high integration density data processing systems can be achieved. The current generation high-speed complementary metal-oxide-semiconductor (CMOS) processors (e.g., Alpha, Pentium, Power PC) are operating at above 300 MHz with 2.5 to 3.3 V output range. Future processors will be designed in the 1.1-1.8 V range, to further enhance their speed-power performance. These new generation microprocessors will present very dynamic loads with high current slew rates during transient. As a result, they will require a special power supply, voltage regulator module (VRM), to provide well-regulated voltage. The VRMs should have high power densities, high efficiencies, and good transient performance. In this paper, the critical technical issues to achieve this target for future generation microprocessors are addressed. A VRM candidate topology, interleaved quasisquare-wave (QSW), is proposed. The design, simulation and experimental results are presented.
机译:通过降低电源电压,可以实现更快,更低的功耗以及更高的集成密度数据处理系统。当前一代的高速互补金属氧化物半导体(CMOS)处理器(例如Alpha,Pentium,Power PC)在300 MHz以上的频率下工作,输出范围为2.5至3.3V。未来的处理器将被设计在1.1-1.8 V范围内,以进一步提高其速度-功率性能。这些新一代微处理器将在瞬态过程中以高电流摆率呈现出非常动态的负载。结果,他们将需要特殊的电源,即稳压器模块(VRM),以提供稳压良好的电压。 VRM应该具有高功率密度,高效率和良好的瞬态性能。在本文中,解决了为下一代微处理器实现此目标的关键技术问题。提出了一种VRM候选拓扑,即交错的准方波(QSW)。介绍了设计,仿真和实验结果。

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