Ultrahigh frequency DC-to-DC converters using GaAs power switches

摘要

A detailed investigation of the switching characteristics for highnfrequency power devices based on different technologies has beennprovided: BJT, MOSFET, and MESFET/HEMT structures are considered.nAdvantages of GaAs power switches over silicon ones have beennestablished and illustrated. Hybrid technology prototypes of DC-to-DCnpower converters operating above 10 MHz and exclusively using GaAsncomponents have been realized: for a nonoptimized boost converternoperating at 100 MHz, a power efficiency of 54% has been achieved with an6 V/12 V conversion ratio and an output power of 1.5 W. For optimizednprototypes, using high frequency assembly techniques, an efficiency ofn80% at 50 MHz, 74% at 100 MHz and 60% at 250 MHz have been obtained withn6 V/12 V and 3 W