首页> 外文期刊>Power Electronics, IEEE Transactions on >Losses in Medium-Voltage Megawatt-Rated Direct AC/AC Power Electronics Converters
【24h】

Losses in Medium-Voltage Megawatt-Rated Direct AC/AC Power Electronics Converters

机译:中压额定兆瓦级直接AC / AC电力电子转换器的损耗

获取原文
获取原文并翻译 | 示例
       

摘要

Direct ac/ac topologies for ac-to-ac power conversion benefit from the absence of dc-link capacitors, and therefore, are highly reliable and have low cost as compared to the traditional voltage-source inverter (VSI)-based topologies. This paper deals with one of the more important tradeoffs considered in designing highly efficient converters: Losses. It is shown in this paper that the direct ac/ac converters have an inherently higher efficiency than their VSI-based back-to-back counterparts due to a dramatic reduction in switching losses (nearly 60%). Further, this paper compares the performance of three different device types (SiC MOSFETs, hybrid Si IGBT/SiC diode, and Si IGBTs) using wide-range device characterization that help to create detailed loss models. It is conjectured that traditional datasheets lack the level of detail needed for computing losses in direct ac/ac converters, and the availability of a multivalue voltage, current, and temperature-based loss profile is advocated. Using the obtained loss models, a comparison is drawn between the considered devices through simulations when operated in a 13-kV/1-MW direct ac/ac power flow controller, the controllable network transformer (CNT). The same loss-models are also used to compute losses in an experimental prototype of a 720-V, 10-kVA CNT and the results are compared with direct efficiency measurements. A similar computation is carried out for another experimental prototype at a 6.7-kV, 400-kVA, three-level, paralleled CNT. These experimental tests are used to confirm the validity of the analytical results presented in this paper.
机译:用于交流到交流电源转换的直接交流/交流拓扑结构得益于不存在直流链路电容器,因此与传统的基于电压源逆变器(VSI)的拓扑结构相比,它具有很高的可靠性和低成本。本文讨论了设计高效转换器时考虑的更重要的权衡之一:损耗。本文表明,由于开关损耗显着降低(将近60%),因此直接ac / ac转换器比基于VSI的背对背转换器具有更高的效率。此外,本文使用有助于创建详细损耗模型的宽范围器件表征,比较了三种不同器件类型(SiC MOSFET,混合Si IGBT / SiC二极管和Si IGBT)的性能。据推测,传统的数据表缺乏计算直接ac / ac转换器中的损耗所需的详细程度,因此提倡使用基于多值电压,电流和温度的损耗曲线。使用获得的损耗模型,当在13 kV / 1 MW直接交流/交流潮流控制器(可控网络变压器(CNT))中运行时,可以通过仿真在考虑的设备之间进行比较。相同的损耗模型还用于计算720V,10kVA CNT的实验原型中的损耗,并将结果与​​直接效率测量结果进行比较。对于另一个实验原型在6.7kV,400kVA,三级平行CNT上进行了类似的计算。这些实验测试用于确认本文提出的分析结果的有效性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号