机译:用于GaN FET的6.7GHz有源栅极驱动器,可应对过冲,振铃和EMI
Faculty of Engineering, University of Bristol, Bristol, U.K.;
Faculty of Engineering, University of Bristol, Bristol, U.K.;
Faculty of Engineering, University of Bristol, Bristol, U.K.;
Faculty of Engineering, University of Bristol, Bristol, U.K.;
Department of Electronic and Electrical Engineering, University of Strathclyde, Strathclyde, U.K.;
Faculty of Engineering, University of Bristol, Bristol, U.K.;
IBM Research–Almaden Labs, San Jose, CA, United States;
Faculty of Engineering, University of Bristol, Bristol, U.K.;
Logic gates; Resistance; Gallium nitride; Switches; Field effect transistors; Clocks; Pulse width modulation;
机译:有源闭环栅极电压控制方法,减轻金属氧化物半导体场效应晶体管的关断电压过冲和振铃
机译:基于GAN的半桥转换器的多目标栅极驱动器设计,优化效率和近场EMI
机译:具有10-GHz航点速率的全定制设计GaN FET的10GHz航点速率
机译:使用6.7 GHz有源栅极驱动器的650 V GaN FET桥式转换器中的串扰抑制
机译:使用可编程栅极驱动器输出电阻来降低离散SMPS的EMI
机译:栅漏电流在AlGaN / GaN肖特基栅HFET和MISHFET中引起的陷阱
机译:用于GaN FET的6.7GHz有源栅极驱动器,可应对过冲,振铃和EMI
机译:用于增强型GaN FET的新型半桥栅极驱动器,Lm5113型,宽温度范围