MOSFETs is propo'/>
机译:考虑栅极漏极电容非线性的SiC MOSFET串扰的预测算法
School of Electrical Engineering Beijing Jiaotong University Beijing China;
School of Electrical Engineering Beijing Jiaotong University Beijing China;
School of Electrical Engineering Beijing Jiaotong University Beijing China;
School of Electrical Engineering Beijing Jiaotong University Beijing China;
School of Electrical Engineering Beijing Jiaotong University Beijing China;
Crosstalk; Silicon carbide; MOSFET; Prediction algorithms; Logic gates; Capacitance; Switches;
机译:碳化硅垂直双扩散MOSFET栅极-漏极电容的测量和建模
机译:考虑非线性结电容的改进SiC功率MOSFET模型
机译:非线性结电容对开关瞬态的影响及其SiC MOSFET的建模
机译:SiC MOSFET非线性米勒电容的物理分析和建模
机译:6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
机译:具有位置载流子散射相关性的准弹道漏电流电荷和电容模型对纳米级对称DG MOSFET有效
机译:模拟沟槽深度对功率MOSFET中栅极-漏极电容的影响
机译:具有非抛物效应的砷化物 - 锑化物量子阱中量子和质心电容的实验测定