The measurement of circuit parasitic parameters and the evaluation of equivalent circuit models are both necessary techniques for noise analysis and the circuit design of high-speed power electronics circuits. Recently, time-domain reflectometry (TDR) has emerged as a technique for measuring circuit parameters. This paper proposes a TDR method for measuring the voltage- dependent capacitance of power devices and passive components. This method can be used to measure the capacitance on any dc bias voltage. The Coss value of MOSFETs with VDS = 0-350 V, the anode-cathode capacitance under reverse bias condition on SiC diodes, and voltage-dependent capacitances of ceramic capacitors were measured in experiments.
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