High resolution, low energy avalanche photodiode X-ray detectors

摘要

Silicon avalanche photodiodes have been fabricated, and their performance as X-ray detectors has been measured. Photon sensitivity and energy resolution were measured as a function of size and operating parameters. Noise thresholds as low as 212 eV were obtained at room temperature, and backscatter X-ray fluorescence data were obtained for aluminum and other light elements. It is concluded that the results with the X-ray detector are extremely encouraging, and the performance is challenging the best available proportional counters. While not at the performance level of either cryogenic silicon or HgI/sub 2/, these devices operate at room temperature and can be reproduced in large numbers and with much larger areas than typically achieved with HgI/sub 2/. In addition, they are rugged and appear to be indefinitely stable.