Beam Test Measurements With Planar and 3D Silicon Strip Detectors Irradiated to sLHC Fluences

摘要

The planned luminosity upgrade of the CERN LHC to the super LHC (sLHC) requires investigation of new radiation hard tracking detectors. Compared to the LHC, tracking detectors must withstand a 5–10 times higher radiation fluence. Promising radiation hard options are planar silicon detectors with n-side readout and silicon detectors in 3D technology, where columnar electrodes are etched into the silicon substrate. This article presents beam test measurements performed with planar and 3D n-in-p silicon strip detectors. The detectors were irradiated to different fluences, where the maximum fluence was $3times 10^{15}$ 1 MeV neutron equivalent particles per square centimeter $({rm n}_{rm eq}/{rm cm}^{2})$ for the planar detectors and ${2times 10^{15}~{rm n}_{rm eq}/{rm cm}^{2}}$ for the 3D detectors. In addition to signal measurements, charge sharing and resolution of both detector technologies are compared. An increased signal from the irradiated 3D detectors at high bias voltages compared to the signal from the unirradiated detector indicates that charge multiplication effects occur in the 3D detectors. At a bias voltage of 260 V, the 3D detector irradiated to ${2times 10^{15}~{rm n}_{rm eq}/{rm cm}^{2}}$ yields a signal almost twice as high as the signal of the unirradiated detector. Only 30% of the signal of an unirradiated detector could be measured with the planar detector irradiated to ${3times 10^{15}~{rm n}_{rm eq}/{rm cm}^{2}}$ at a bias voltage of 600 V, which was the highest bias voltage applied to this sensor.