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GeFRO: A New Charge Sensitive Amplifier Design for Wide Bandwidth and Closed-Loop Stability Over Long Distances

机译:GeFRO:一种新的电荷敏感放大器设计,可实现宽带宽和长距离闭环稳定性

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摘要

A new approach was developed for the design of front-end circuits for semiconductor radiation detectors. The readout scheme is a charge sensitive amplifier, split between a very front-end stage (input transistor, feedback resistor and capacitor) located close to the detector and a remote second stage located far from the detector. The element of novelty, with respect to similar configurations, is the fact that the connecting links between the very front-end and the second stage are made with transmission lines. As a result, wide bandwidth and closed-loop stability are maintained even if the distance between the very front-end and the second stage is much larger than usual, up to tens of meters. The circuit was named GeFRO for Germanium front-end, and was tested with a BEGe detector from Canberra. Timing resolutions of 20 ns (open loop) and 185 ns (closed loop with 60 $^ circ $ phase margin) were obtained with 10 m long cables between the very front-end and the second stage. The noise of the circuit after a $10~muhbox{s} $ Gaussian shaping was close to $160 ~hbox{e}^ - $ RMS with an input capacitance of 26 pF.
机译:开发了一种用于半导体辐射探测器前端电路设计的新方法。读出方案是电荷敏感放大器,分为位于靠近检测器的非常前端级(输入晶体管,反馈电阻和电容器)和远离检测器的远端第二级。就类似的构造而言,新颖性的要素是这样的事实,即,在最前端和第二级之间的连接链接是通过传输线进行的。结果,即使最前端和第二级之间的距离比平时大得多,甚至达到几十米,也可以保持宽带宽和闭环稳定性。该电路被称为锗前端的GeFRO,并使用堪培拉的BEGe探测器进行了测试。在前端和第二级之间使用10 m长的电缆,可获得20 ns(开环)和185 ns(闭环,相位裕度为60 ns)的时序分辨率。在输入电容为26 pF的情况下,经过$ 10〜muhbox {s} $高斯整形后,电路的噪声接近$ 160〜hbox {e} ^-$ RMS。

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