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首页> 外文期刊>IEEE Transactions on Nuclear Science >Thermoluminescent Properties of Undoped and Ce-Doped Lutetium Orthosilicate and Yttrium Orthosilicate Single Crystals and Single Crystalline Films Scintillators
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Thermoluminescent Properties of Undoped and Ce-Doped Lutetium Orthosilicate and Yttrium Orthosilicate Single Crystals and Single Crystalline Films Scintillators

机译:未掺杂和铈掺杂的原硅酸L和原硅酸钇单晶和单晶膜闪烁体的热致发光特性

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In this work the comparative analysis of thermoluminescent properties of undoped and Ce-doped single crystals (SC) and single crystalline films (SCF) of ${{rm Lu}_2}{rm SiO}_5$ (LSO) and ${{rm Y}_2}{rm SiO}_5$ (YSO) orthosilicates were performed. The SC samples were prepared with the Czochralski method, and SCF were grown by the liquid phase epitaxy technique. We show that such different methods of material preparation resulted in different thermoluminescent properties of undoped and ${rm Ce}^{3+}$ doped LSO and YSO SC and SCF caused by the presence host defects (first of all, oxygen vacancies) as trapping centers in SC and formation of ${rm Pb}^{2+}hbox{-}{rm Ce}^{4+}$ pair centers in SCF.
机译:在这项工作中,对$ {{rm Lu} _2} {rm SiO} _5 $(LSO)和$ {{rm}的未掺杂和Ce掺杂的单晶(SC)和单晶膜(SCF)的热致发光特性进行比较分析。进行了Y} _2} {rm SiO} _5 $(YSO)原硅酸盐的制备。用切克劳斯基方法制备SC样品,并通过液相外延技术生长SCF。我们表明,这种不同的材料制备方法会导致未掺杂和$ {rm Ce} ^ {3 +} $掺杂的LSO和YSO SC和SCF的不同热致发光特性,这是由存在的主体缺陷(首先是氧空位)引起的。在SC中捕获中心并在SCF中形成$ {rm Pb} ^ {2+} hbox {-} {rm Ce} ^ {4 +} $对中心。

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