Modeling of asymmetric and offset gaps in shielded microstrips and slotlines

摘要

A generalized model for characterizing the frequency-dependent properties of general symmetric, asymmetric, and offset gaps in microstrips and slotlines on a single-layer or multilayer dielectric medium is presented. The transverse resonance technique is applied in the spectral domain to extract the equivalent circuit model parameters of the discontinuities. This technique incorporates the end effect of the discontinuity by a compatible choice of basis functions.