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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Hybrid-mode analysis of homogeneously and inhomogeneously doped low-loss slow-wave coplanar transmission lines
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Hybrid-mode analysis of homogeneously and inhomogeneously doped low-loss slow-wave coplanar transmission lines

机译:均匀和不均匀掺杂的低损耗慢波共面传输线的混合模式分析

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A hybrid-mode analysis is presented to characterize the propagation properties of uniplanar slow-wave MIS (metal-insulator-semiconductor) coplanar transmission lines. The effect of homogeneous versus gradually inhomogeneous doping profile is investigated as well as the influence of the metal conductor losses and finite metallization thickness on the slow-wave factor and the overall losses. Numerical results indicate that thick-film MIS CPWs can support a slow-wave mode with moderate loss up to 40 GHz when the line dimensions are kept in the micrometer range. Furthermore, it is found that an inhomogeneous doping profile can reduce the overall losses and that the effect of metal conductor losses in heavily doped MIS structures is only marginal. On the other hand, in weakly doped or insulating GaAs material a lossy metal conductor leads to a higher propagation constant, exhibiting a negative slope with increasing frequency.
机译:提出了一种混合模式分析,以表征单平面慢波MIS(金属-绝缘体-半导体)共面传输线的传播特性。研究了均匀掺杂和逐渐不均匀掺杂分布的影响,以及金属导体损耗和有限的金属化厚度对慢波系数和总损耗的影响。数值结果表明,当线径保持在微米范围内时,厚膜MIS CPW可以支持慢波模式,损耗高达40 GHz。此外,发现不均匀的掺杂分布可以减小总损耗,并且在重掺杂的MIS结构中金属导体损耗的影响仅是很小的。另一方面,在弱掺杂或绝缘的GaAs材料中,有损耗的金属导体会导致较高的传播常数,并随频率增加而呈现负斜率。

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