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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Admittance calculation of a slot in the shield of a multiconductor transmission line
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Admittance calculation of a slot in the shield of a multiconductor transmission line

机译:多导体传输线屏蔽中缝隙的导纳计算

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摘要

The admittance calculation for a narrow slot in the conducting shield of a multiconductor transmission line (MTL) is presented. An approximate calculation is given for the admittance seen looking into a slot in the shield of a multiconductor transmission line when a uniform magnetic current is placed over the slot. The calculation presented is approximate in that only the transmission line mode is used in the calculation. All higher-order waveguide modes are neglected. This allows the magnetic current to be replaced by a point voltage source at the slot location. The admittance calculation then corresponds to calculating the driving point admittance of a point voltage source located in the shield of an MTL.
机译:给出了多导体传输线(MTL)的导电屏蔽中窄缝的导纳计算。对于在多导体传输线的屏蔽层中的缝隙中均匀施加磁通电流时所观察到的导纳,给出了近似计算。提出的计算是近似的,因为在计算中仅使用传输线模式。忽略了所有高阶波导模式。这允许在插槽位置用点电压源代替磁电流。然后,导纳计算对应于计算位于MTL屏蔽中的点电压源的驱动点导纳。

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