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Radiation from planar resonators

机译:平面谐振器的辐射

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Power radiated from microstrip-based resonators is calculated by integration of a Green's function with assumed currents, a method that is convenient and is thought to be more accurate than previous methods used in calculations of radiation Q. Resonators consisting of two coupled microstrips excited in the odd mode are found to radiate much less than conventional single-microstrip resonators or U-shaped hairpin resonators. However, when the resonator is loaded by a semiconductor device, as in an oscillator, radiation increases. Asymmetries in the resonators, arising from output coupling or fabrication errors, introduce even-symmetric currents which radiate much more strongly than odd-mode currents. The effects of such asymmetries on radiated power are estimated. On the basis of these findings, a convenient geometry for high-power planar oscillators with low radiation is proposed.
机译:基于格林斯通的谐振器辐射的功率通过格林函数与假定电流的积分计算得出,该方法比以前计算辐射Q时所使用的方法更为方便,并且被认为比以前的方法更为精确。谐振器由两个耦合的微带组成发现奇数模式的辐射比常规的单微带谐振器或U形发夹谐振器要少得多。然而,当谐振器由半导体装置加载时,如在振荡器中一样,辐射增加。由输出耦合或制造误差引起的谐振器中的不对称会引入偶数对称电流,其辐射强度比奇模电流强得多。估计了这种不对称对辐射功率的影响。基于这些发现,提出了一种适用于低辐射的大功率平面振荡器的方便几何结构。

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