A class-E power amplifier based on an extended resonance technique

摘要

In this paper, a class-E power amplifier using four 1-W GaAs MESFET's at 935 MHz is demonstrated using a new extended resonance power-combining technique. A microstrip amplifier based on this technique was designed and fabricated which combines four 1-W Siemens CLY5 GaAs MESFET's with 67% power-added efficiency at 935 MHz.