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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Broad-band 180/spl deg/ phase shifters using integrated submillimeter-wave Schottky diodes
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Broad-band 180/spl deg/ phase shifters using integrated submillimeter-wave Schottky diodes

机译:使用集成的亚毫米波肖特基二极管的宽带180 / spl deg /移相器

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摘要

A proof-of-concept broad-band 180/spl deg/ phase shifter operating at 220 GHz and based on planar integrated Schottky diodes is presented. The phase shifter is a monolithic implementation incorporating impedance transformers designed to yield broad-band operation and compensate for amplitude imbalance between bias states of the diodes. The circuit described in this paper has yielded a phase shift of 180/spl deg//spl plusmn/15/spl deg/ over a 55-GHz band with average insertion loss of 5.5 dB. Moreover, the phase shifter is demonstrated and tested as a sideband generator where it has exhibited an average carrier-to-single sideband conversion loss of 10 dB. The circuit architecture is scalable to submillimeter frequencies where phase shifters are often employed for sideband generation and parametric upconversion.
机译:提出了基于平面集成肖特基二极管的概念验证宽带180 / spl deg /移相器,工作于220 GHz。移相器是采用阻抗变换器的单片实施方案,该阻抗变换器设计为产生宽带工作并补偿二极管偏置状态之间的幅度不平衡。本文描述的电路在55 GHz频段上产生了180 / spl deg // spl plusmn / 15 / spl deg /的相移,平均插入损耗为5.5 dB。此外,该移相器已作为边带发生器进行了演示和测试,其平均载波到单个边带转换损耗为10 dB。该电路架构可扩展至亚毫米级频率,其中相移器通常用于边带生成和参数上变频。

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