Integrated Interconnect Networks for RF Switch Matrix Applications

摘要

In this paper, two new types of integrated RF interconnect networks are presented. The circuits are printed on double-sided alumina substrates, eliminating the need to use multilayer manufacturing technology. The interconnect networks employ finite ground coplanar lines and vertical transitions and can be easily integrated with semiconductor and microelectromechanical-systems switches. A wide-band 3×3 interconnect network utilizing single and double three-via vertical transitions is investigated theoretically and experimentally. The measured results show a return loss of -20 dB and an isolation of better than -40 dB up to 30 GHz. A vialess double-sided interconnect network is also studied and optimized for satellite Ku-band applications. This type of interconnect network uses a process requiring only front and back pattern metallization. The measured results indicate a return loss of better than -17 dB and an isolation of better than -45 dB.