Broadband Integrated Millimeter-Wave Up- and Down-Converter GaAs MMICs

摘要

The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into compact MMICs. Broadband performance was achieved for approximately 17-35 GHz (low band) and 30-45 GHz (high band) with up-conversion input-referred, third-order intercept point exceeding 12 and 10 dBm, respectively, with good 2X local oscillator leakage and excellent gain control. To the best of the authors' knowledge, this is the highest level of integration achieved for up- and down-converters at these frequencies.