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Novel U-Slot and V-Slot DGSs for Bandstop Filter With Improved Q Factor

机译:具有改进Q因子的带阻滤波器的新型U型槽和V型槽DGS

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摘要

Novel slot-shaped defected ground structures (DGSs) on the microstrip line are presented to provide a band-rejection property with an improved Q factor. Two different geometries (U-slot and V-slot) are investigated. U-slot and V-slot DGSs have simple shapes compared to the conventional DGSs, however, they provide more steep rejection characteristics. The Q factor of the band-rejection property for the U-slot DGS increases when the distance between two slots in the U-shape decreases. Similarly, the V-slot DGS provides a higher Q characteristic when the slot angle is reduced. Two bandstop filters are designed and fabricated employing three cascaded U-slot DGSs and V-slot DGSs, respectively. Experimental result shows that the high-Q band-rejection filter with three U-slot DGSs provides Q of 38.6. A fabricated filter with three cascaded V-slot DGSs also rejects the signals at the frequencies from 3.5 to 4.3 GHz with more than 20-dB suppression.
机译:提出了微带线上的新型缝隙形缺陷接地结构(DGS),以提供具有改善的Q因子的带阻特性。研究了两种不同的几何形状(U型槽和V型槽)。与传统DGS相比,U槽和V槽DGS具有简单的形状,但是它们具有更陡峭的抑制特性。当U形中两个槽之间的距离减小时,U槽DGS的带阻特性的Q因子增加。类似地,当槽角减小时,V型槽DGS可提供更高的Q特性。设计和制造了两个带阻滤波器,分别使用三个级联的U槽DGS和V槽DGS。实验结果表明,带有三个U槽DGS的高Q带阻滤波器的Q为38.6。具有三个级联V槽DGS的预制滤波器还可以抑制3.5至4.3 GHz频率的信号,并具有20 dB以上的抑制。

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