首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 1-V 5-GHz CMOS Multiple Magnetic Feedback Receiver Front-End
【24h】

A 1-V 5-GHz CMOS Multiple Magnetic Feedback Receiver Front-End

机译:1V 5-GHz CMOS多磁反馈接收器前端

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

In this paper, a receiver front-end module operating at 5 GHz and suitable for low-voltage operation is presented. The design consists of a single amplifying transistor low-noise amplifier topology that utilizes multiple magnetic feedback in order to simultaneously achieve high gain and high reverse isolation. In addition, a mixer topology for optimum performance regarding gain, noise, and linearity under low-voltage operation is presented. The design has been fabricated in IBM''s 0.13-$mu{hbox {m}}$ CMOS technology, and the measured performance indicates a receiver conversion gain of 22.3 dB, a noise figure of 2.64 dB, and a third-order input intercept point of $+{hbox{0.1 dBm}}$ .
机译:在本文中,提出了一种工作在5 GHz且适用于低压运行的接收机前端模块。该设计由单个放大晶体管低噪声放大器拓扑组成,该拓扑利用多个磁反馈以同时实现高增益和高反向隔离。此外,提出了一种混频器拓扑,可在低压操作下获得最佳的增益,噪声和线性度性能。该设计采用IBM的0.13- $ mu {hbox {m}} $ CMOS技术制成,实测性能表明接收器转换增益为22.3 dB,噪声系数为2.64 dB,并且是三阶输入$ + {hbox {0.1 dBm}} $的截点。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号